GATE 2021 ME Question Paper with Answer Key February 14 Afternoon Session

GATE 2021 ME Question Paper February 14 Afternoon Session was moderately difficult with a few complex and lengthy questions. GATE 2021 ME question paper had maximum questions from the manufacturing section while only 1 question was asked from the Machine Design topic. There were more application based questions in the paper. Check GATE ME Syllabus

Candidates preparing for GATE 2023 can download GATE 2021 ME question paper with answer key PDFs to understand GATE exam pattern and difficulty level & types of questions asked.

GATE 2021 ME Afternoon Session – February 14, 2021

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GATE 2021 ME February 14 (Afternoon Session): Sectional Analysis

GATE 2021 was held on February 14, 2021. The timing of the afternoon shift was 3 pm to 6 pm. GATE paper analysis for ME afternoon session is given below:

Exam takers found the overall difficulty level of the Afternoon session to be moderate
The majority of the questions asked were application-based. No MSQs were asked.
NATs were 24 and MCQs were 41

Topics	Questions	Difficulty Level
General Aptitude	10	Moderate
Engineering Mathematics	9	Moderate
Theory Of Machines & Vibrations	6	Easy
Manufacturing	11	Moderate
Mechanics of Materials	5	Moderate
Machine Design	1	Moderate
Fluid Mechanics	6	Moderate
Thermodynamics & Applications	7	Moderate
Industrial Engineering	4	Moderate
Engineering Mechanics	2	Moderate
Heat Transfer	3	Difficult

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GATE Previous Year Question Paper with Answer Key PDFs

Candidates preparing for GATE 2023 can go through the previous year GATE question papers to understand the kind of questions asked in the exam.

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1.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. $(f(x)=x^2)$

N₂ + O₂ → N₂O₅ (unbalanced equation)
2N₂ + 5O₂ → 2N₂O₅
option 3

View Solution

2.
new

new one
new one two

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3.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

Square
Rectangle

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4.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

View Solution

5.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

12 sq.units
24 sq.units

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6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

$\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
$({\frac{x^3}{9}})$
$\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]$
$\omega\propto\,n^{\frac{1}{3}}$

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GATE 2021 ME Question Paper with Answer Key February 14 Afternoon Session

GATE 2021 ME Afternoon Session – February 14, 2021

GATE 2021 ME February 14 (Afternoon Session): Sectional Analysis

GATE Previous Year Question Paper with Answer Key PDFs

Other PG Exam Question Papers:

GATE Questions

1.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

2.
new

3.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

4.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

5.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

GATE 2021 ME Afternoon Session – February 14, 2021

GATE 2021 ME February 14 (Afternoon Session): Sectional Analysis

GATE Previous Year Question Paper with Answer Key PDFs

Other PG Exam Question Papers:

GATE Questions

1.Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)

2.new

3.The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

4.In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

5.The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

6.For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

Fees Structure

Structure based on different categories

Comments

SUBSCRIBE TO OUR NEWS LETTER

1.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

2.
new

3.
The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

4.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

5.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

6.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium