GATE 2015 EE Slot 1 Question Paper and Answer Key PDFs are now available for download. The exam was conducted by the IIT Kanpur on February 7, 2015 in the Forenoon session. The paper included 65 questions, and the total duration of the exam was 3 hours. GATE 2015 EE was having questions related to electrical, signal, networking, circuits, etc. The question paper of GATE EE 2015 were having both Multiple Type Questions(MCQ) and Numerical Answer Type (NAT) Questions. In GATE EE 2015, the question paper has 1 and 2 marks questions, for every incorrect answer 0.25 and 0.5 marks, were deducted respectively.
GATE 2015 Electrical Engineering (EE) Slot 1 Question Paper with Answer Key PDFs (February 7- Forenoon Session)
| GATE 2015 EE Slot 1 Question Paper | GATE 2015 EE Slot 1 Answer Key |
|---|---|
| Download PDF | Download PDF |
GATE 2015 EE Slot 1 Paper Analysis
GATE 2015 EE Slot 1 question paper had 10 questions from general aptitude section and 55 questions from the core discipline.
Type of Questions |
Core Discipline | |
|---|---|---|
| Number of Questions | Marks | |
| No. of 1 mark MCQs | 22 | 22 |
| No. of 2 marks MCQs | 20 | 40 |
| No. of 1 mark NATs | 8 | 8 |
| No. of 2 marks NATs | 15 | 30 |
GATE Previous Year Question Paper
Aspirants preparing for GATE upcoming exams must practice the previous year's papers in order to score well in the exams. Practicing and solving previous year's GATE question papers will help a candidate evaluate their preparation and performance.
| GATE 2022 Question Papers | GATE 2021 Question Papers | GATE 2020 Question Papers |
| GATE 2019 Question Papers | GATE 2018 Question Papers | GATE 2017 Question Papers |
Other PG Exam Question Papers:
GATE Questions
1. The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:
- Square
- Rectangle
2. The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:
12 sq.units
24 sq.units
3. Direction: In these tests you will find an Incomplete Figure and four Answer Figures. You have to select one diagram from the Answer Figures which fits into the blank column in Incomplete Figure in order to complete it
Incomplete Figure
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Answer Figures
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Incomplete Figure
Answer Figures
Figure (a)
Figure (b)
Figure ©
4. Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)
Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)
- N2 + O2 → N2O5 (unbalanced equation)
- 2N2 + 5O2 → 2N2O5
- option 3
5. For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium
- $\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
- $({\frac{x^3}{9}})$
\(\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]\)- $\omega\propto\,n^{\frac{1}{3}}$
6. In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.
a
b
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