GATE 2010 Mechanical Engineering (ME) Question Paper with Answer Key PDFs (February 14- Forenoon Session)

GATE 2010 Mechanical Engineering (ME) Question paper with answer key pdfs are available for download. GATE 2010 ME Paper was conducted by the Indian Institute of Technology (IIT) Guwahati in the Forenoon Session on February 14. GATE 2010 IN had a moderate difficulty level. There were a total of 65 questions with 1 mark and 2 mark MCQs from General Aptitude and Mechanical Engineering.

GATE 2010 Mechanical Engineering (ME) Question Paper with Answer Key Pdfs Offline (February 14 - Forenoon Session)

GATE 2010 Mechanical Engineering (ME) Question Paper	GATE 2010 Mechanical Engineering (ME) Answer Key
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GATE 2010 Mechanical Engineering (ME) Paper Analysis

There were 65 multiple-Choice questions in the test. Questions 1 to 25 carry 1mark and 26 to 55 carries 2 marks and Question 56 to 65 belong to General Aptitude with 56 to 60 being 1 mark and 61 to 65 comprising 2mark. The technical component was graded as 'easy to moderate,' while the general aptitude section was evaluated as 'easy.'
GATE 2010 IN has 65 MCQ questions, according to IIT Roorkee. Please see the table below for information on the MCQs that were listed based on the marks earned.

Question Types	Question Frequency	Carried Marks
MCQs with 1 mark	30	30
MCQs with 2 marks	35	70
Total	65	100

GATE Previous Year Question Papers:

Candidates may examine their performance levels by solving prior year’s examination papers. To enhance the accuracy level, candidates are advised to solve GATE Question Papers daily. One of the most significant parts of efficient exam preparation is the GATE ME 2010 question paper. Including previous year question papers in your preparation plan will help you achieve a higher score.

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1.
Question Text

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2.
The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

12 sq.units
24 sq.units

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3.
In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

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4.
Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. $(f(x)=x^2)$

N₂ + O₂ → N₂O₅ (unbalanced equation)
2N₂ + 5O₂ → 2N₂O₅
option 3

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5.
For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

$\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
$({\frac{x^3}{9}})$
$\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]$
$\omega\propto\,n^{\frac{1}{3}}$

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6.
test

test
test

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Fees Structure

Structure based on different categories

Categories	State
General	1400
Women	900
sc	900
pwd	900

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GATE 2010 Mechanical Engineering (ME) Question Paper with Answer Key PDFs (February 14- Forenoon Session)

GATE 2010 Mechanical Engineering (ME) Question Paper with Answer Key Pdfs Offline (February 14 - Forenoon Session)