GATE 2009 Electronics and Communication Engineering (EC) Question Paper with Answer Key PDF (February 8- Forenoon Session)

GATE 2009 Electronics and Communication Engineering (EC) Question Paper with Answer Key PDFs are available for download. GATE 2009 Electronics and Communication Engineering (EC) was conducted by the Indian Institute of Technology, Roorkee on February 8, 2009 in the Forenoon session. The paper consisted of 60 questions and the total marks for the exam was 100. The duration of GATE 2009 EC was 3 hours.

GATE 2009 Electronics and Communication Engineering (EC) Question Paper with Answer Key Pdfs Offline (February 8- Forenoon Session)

GATE 2009 Electronics and Communication Engineering (EC) Question Paper GATE 2009 Electronics and Communication Engineering (EC) Answer Key
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GATE 2009 Electronics and Communication Engineering (EC) Paper Analysis

The question paper of GATE EC 2009 had questions related to Electronics, Communication, networks, Signals, Circuits, etc. GATE EC 2009 consisted only of Objective Type Questions. GATE EC 2009 had questions of 1 and 2 marks, and for every incorrect answer, 0.25 and 0.5 marks were deducted respectively.In GATE EC 2009, 60 questions were directly asked from the core discipline only. There was no negative marking for unattempted questions. Details regarding the GATE EC 2009 are given below:

Type of Questions Core Discipline
Number of Questions Marks
No. of 1 mark MCQs 20 20
No. of 2 marks MCQs 40 80

GATE Previous Year Question Paper

Aspirants preparing for GATE upcoming exams should practice the previous year's Question papers to score well. Candidates must solve questions from previous years' GATE papers in order to evaluate their preparation and performance.

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GATE Questions

  • 1.
    The points (-1, –2), (1, 0), (-1, 2), (-3, 0) form a quadrilateral of type:

      • Square
      • Rectangle

    • 2.

      new

        • new one

        • new one two


      • 3.

        Write a balanced equation for the reaction of molecular nitrogen (N2) and oxygen (O2) to form dinitrogen pentoxide. \((f(x)=x^2)\)

          • N2 + O2 → N2O5 (unbalanced equation)
          • 2N2 + 5O2 → 2N2O5
          • option 3

        • 4.
          Direction: In these tests you will find an Incomplete Figure and four Answer Figures. You have to select one diagram from the Answer Figures which fits into the blank column in Incomplete Figure in order to complete it
          Incomplete Figure

          Answer Figures

            • Figure (a)

            • Figure (b)

            • Figure ©


          • 5.

            sample text

              • dfb

              • dfg


            • 6.

              In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.


               

                • a

                • b

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