GATE 2003 Electrical Engineering (EE) Question Paper with Answer Key PDF (February 9)

GATE Questions

• 1.

  Question Text

  • A
  • B
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• 2.

  In p-type semiconductor density of mobile holes exceeds that of conduction electrons. Hence, minority carriers in p -type semiconductor are conduction (free) electrons.

  
   

  • a

  • b

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• 3.

  For the reaction, $H_{2} + I_{2} {\rightleftharpoons} 2HI, K= 47.6.$ If the initial number of moles of each reactant and product is 1 mole then at equilibrium

  • $\left[I_{2}\right]=\left[H_{2}\right], \left[I_{2}\right] > \left[HI\right]$
  • $({\frac{x^3}{9}})$
  • \(\left[I_{2}\right]>\left[H_{2}\right], \left[I_{2}\right] = \left[HI\right]\)

  • $\omega\propto\,n^{\frac{1}{3}}$
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• 4.

  The area of a rhombus whose vertices are (3, 0), (4, 5), (-1, 4) and (-2,-1) taken in order, is:

  • 12 sq.units

  • 24 sq.units

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• 5.

  test

  • test

  • test

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• 6.

  Write a balanced equation for the reaction of molecular nitrogen (N₂) and oxygen (O₂) to form dinitrogen pentoxide. \((f(x)=x^2)\)

  • N₂ + O₂ → N₂O₅ (unbalanced equation)
  • 2N₂ + 5O₂ → 2N₂O₅
  • option 3
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